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- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,382
Verfügbar auf Lager
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Infineon / IR | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | |||
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Ein Angebot |
2,042
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 75V 42A 26mOhm 74nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||
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Ein Angebot |
477
Verfügbar auf Lager
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 4 V | 74 nC | Enhancement | ||
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siehe | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | |||||||
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siehe | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | |||||||
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siehe | Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | |||||||
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siehe | Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC |
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