Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRF1607PBF
1+
$1.0680
10+
$0.9080
100+
$0.7880
250+
$0.7440
Ein Angebot
RFQ
1,787
Verfügbar auf Lager
Infineon Technologies MOSFET MOSFT 75V 142A 7.5mOhm 210nC 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 75 V 142 A 7.5 mOhms   210 nC  
IPP023N10N5AKSA1
1+
$2.0520
10+
$1.7440
100+
$1.5120
250+
$1.4360
Ein Angebot
RFQ
282
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 100V 120A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 120 A 2 mOhms 2.2 V 210 nC Enhancement
IPP023N10N5
1+
$2.0520
10+
$1.7440
100+
$1.5120
250+
$1.4360
Ein Angebot
RFQ
500
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 100V 120A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 120 A 2 mOhms 2.2 V 210 nC Enhancement