- Hersteller :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
1,422
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | ||||
|
Ein Angebot |
872
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 240A D2PAK-7 | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 1 MOhms | 3 V | 210 nC | Enhancement | StrongIRFET | |||||
|
Ein Angebot |
164
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFET N-CH 40V 240A D2PAK-7 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 362 A | 700 uOhms | 3 V | 210 nC | Enhancement | StrongIRFET |
1 / 1 Seite