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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Diodes Incorporated | MOSFET Enh FET 12Vdss 8Vgss 20V Complementary | 8 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V | 9.5 A, 6.9 A | 17 mOhms, 32 mOhms | 0.6 V to 1.5 V | 18.6 nC | Enhancement |
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