- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 40 V, 40 V | 100 A, 100 A | 0.0029 Ohms, 0.0029 Ohms | 2.5 V, 2.5 V | 75 nC, 75 nC | Enhancement | ||
|
|
Ein Angebot |
2,848
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10.5 mOhms, 10.5 mOhms | 2.5 V, 2.5 V | 35 nC, 35 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 17.9 mOhms, 17.9 mOhms | 2.5 V, 2.5 V | 25 nC, 25 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET Dual N-Channel 40V PowerPAK | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0079 Ohms, 0.0079 Ohms | 2.5 V, 2.5 V | 30 nC, 30 nC | Enhancement |
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