- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
5,000
Verfügbar auf Lager
|
Nexperia | MOSFET PMDXB600UNEL/DFN1010B-6/REEL 7 | 8 V, 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 600 mA, 600 mA | 470 mOhms, 470 mOhms | 450 mV, 450 mV | 700 pC, 700 pC | Enhancement | ||
|
|
Ein Angebot |
10,194
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET DUAL N-CH 20V 0.23A | 10 V, 10 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 240 mA, 240 mA | 1.8 Ohms, 1.8 Ohms | 450 mV, 450 mV | Enhancement | |||
|
|
|
Ein Angebot |
7,148
Verfügbar auf Lager
|
Nexperia | MOSFET 20 V, dual N-channel Trench MOSFET | 8 V, 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 600 mA, 600 mA | 3 Ohms, 3 Ohms | 450 mV, 450 mV | 0.4 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified | 12 V, 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 800 mA, 800 mA | 200 mOhms, 200 mOhms | 450 mV, 450 mV | 1.15 nC, 1.15 nC | Enhancement |
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