- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
5,108
Verfügbar auf Lager
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Diodes Incorporated | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 1.8 A, - 1.42 A | 250 mOhms, 600 mOhms | 1 V, - 3 V | 3.2 nC, 5.1 nC | Enhancement | |||
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Ein Angebot |
1,660
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge | +/- 20 V, +/- 20 V | SMD/SMT | V-DFN5045-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 2.9 A, - 2.3 A | 111 mOhms, 191 mOhms | 1 V, - 3 V | 9.7 nC, 17.5 nC | Enhancement | |||
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Ein Angebot |
2,077
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS | +/- 20 V, +/- 20 V | SMD/SMT | DFN3020-B-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.7 A, - 2.7 A | 100 mOhms, 280 mOhms | 1 V, - 3 V | 3.9 nC, 6.4 nC | Enhancement | |||
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Ein Angebot |
2,483
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 40V Comp Dual ENH Low On-Resistance | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7.2 A, 5.2 A | 18 mOhms, 39 mOhms | 1 V, - 3 V | 12.9 nC, 14 nC | Enhancement | |||
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Ein Angebot |
2,400
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 5.5 A, - 5.8 A | 19 mOhms, 21 mOhms | 1 V, - 3 V | 13.2 nC, 22 nC | Enhancement | |||
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Ein Angebot |
490
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.3 A, 5.3 A | 24 mOhms, 80 mOhms | 1 V, - 3 V | 12.9 nC, 12.7 nC | Enhancement | |||
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Ein Angebot |
7,500
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET H-BRIDGE SOP-8L | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 4.98 A, - 4.13 A | 33 mOhms, 80 mOhms | 1 V, - 3 V | 9 nC, 12.7 nC | Enhancement | |||
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Ein Angebot |
2,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2.4 A | 60 mOhms, 115 mOhms | 1 V, - 3 V | 11.5 nC, 8.9 nC | Enhancement | |||
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Ein Angebot |
4,000
Verfügbar auf Lager
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Micro Commercial Components (MCC) | MOSFET N&P-Channel MOSFET, SOP-8 package | +/- 20 V, +/- 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 4.5 A, - 3.5 A | 40 mOhms, 60 mOhms | 1 V, - 3 V | 9 nC, 12 nC | Enhancement | |||
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Ein Angebot |
4,000
Verfügbar auf Lager
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Micro Commercial Components (MCC) | MOSFET N&P-Channel MOSFET, SOP-8 package | +/- 20 V, +/- 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6.9 A, 6.3 A | 10 mOhms, 16 mOhms | 1 V, - 3 V | 13.5 nC, 20 nC | Enhancement |
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