- Hersteller :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,021
Verfügbar auf Lager
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | ||
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Ein Angebot |
255
Verfügbar auf Lager
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | ||
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Ein Angebot |
631
Verfügbar auf Lager
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | - 2 V to - 4 V | 44 nC | Enhancement | ||
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Ein Angebot |
4
Verfügbar auf Lager
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 2 V to - 4 V | 196 nC | |||||
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Ein Angebot |
177
Verfügbar auf Lager
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IXYS | MOSFET TrenchP Channel Power MOSFETs | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 140 A | 10 mOhms | - 2 V to - 4 V | 400 nC | Enhancement | ||
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Ein Angebot |
384
Verfügbar auf Lager
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IXYS | MOSFET -44 Amps -150V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | - 2 V to - 4 V | 175 nC | Enhancement | ||
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siehe | Infineon Technologies | MOSFET Automotive MOSFET 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 120 nC | Enhancement |
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