- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
14 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
5,950
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 100 V 25 mOhm 7.8 A STripFET III | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.8 A | 35 mOhms | 1 V to 3 V | 20.5 nC | |||
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Ein Angebot |
1,180
Verfügbar auf Lager
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Infineon / IR | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||
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Ein Angebot |
406
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 12 mOhms | 1 V to 3 V | 17 nC | Enhancement | ||
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Ein Angebot |
2,217
Verfügbar auf Lager
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Panasonic | MOSFET 30V N-ch Power MOSFET 6.15x5.1mm | SMD/SMT | HSO-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 10 mOhms | 1 V to 3 V | 6.3 nC | ||||
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siehe | Panasonic | MOSFET 30V Dual N-ch Power MOSFET 6.15x5.1mm | SMD/SMT | HSO-8 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 30 V | 40 A | 10 mOhms | 1 V to 3 V | 6.3 nC | |||||
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Ein Angebot |
90
Verfügbar auf Lager
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Panasonic | MOSFET 30V N-ch Power MOSFET 3.3x3.25mm | SMD/SMT | HSSO-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10 mOhms | 1 V to 3 V | 6.3 nC | ||||
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siehe | Infineon / IR | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 1 V to 3 V | 61 nC | Enhancement | |||
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siehe | STMicroelectronics | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.6 mOhms | 1 V to 3 V | 80 nC | ||||
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Ein Angebot |
1,379
Verfügbar auf Lager
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Infineon / IR | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 1 V to 3 V | 10 nC | Enhancement | ||
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Ein Angebot |
566
Verfügbar auf Lager
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Infineon / IR | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 1 V to 3 V | 40 nC | Enhancement | ||
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Ein Angebot |
421
Verfügbar auf Lager
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Infineon / IR | MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 17 mOhms | 1 V to 3 V | 61 nC | Enhancement | ||
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Ein Angebot |
670
Verfügbar auf Lager
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Infineon / IR | MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 1 V to 3 V | 24 nC | Enhancement | ||
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Ein Angebot |
16
Verfügbar auf Lager
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Infineon / IR | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||
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Ein Angebot |
6
Verfügbar auf Lager
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Infineon / IR | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 1 V to 3 V | 93.3 nC | Enhancement |
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