- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
9 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
14,500
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT8P 20_8V from vanguard | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 20 mOhms | - 400 mV | 44 nC | Enhancement | PowerTrench | ||
|
|
|
Ein Angebot |
4,262
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT8P 20/8V power PQFN33 with cu wire | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 11.5 mOhms | - 400 mV | 87 nC | Enhancement | PowerTrench | ||
|
|
Ein Angebot |
2,615
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | ||
|
|
Ein Angebot |
5,684
Verfügbar auf Lager
|
Nexperia | MOSFET 20 V, P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 950 mOhms | - 400 mV | 6.8 nC | Enhancement | |||
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|
|
Ein Angebot |
1,704
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | +/- 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 156 nC | Enhancement | PowerDI | ||
|
|
Ein Angebot |
5,298
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 900 mOhms | - 400 mV | 0.7 nC | Enhancement | |||
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|
Ein Angebot |
93
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad P-Channel Array | -10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | P-Channel | - 12 V | - 2 mA | 1.2 kOhms | - 400 mV | Enhancement | ||||
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siehe | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement | ||||
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siehe | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement |
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