- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
91,942
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.3 A | 500 mOhms | 0.95 V | 1.6 nC | Enhancement | ||||
|
Ein Angebot |
12,010
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-CH MOSFET | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 650 mA | 760 mOhms | 0.95 V | 0.7 nC | Enhancement | ||||
|
Ein Angebot |
3,824
Verfügbar auf Lager
|
Nexperia | MOSFET 20V N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 380 mOhms | 0.95 V | 0.68 nC | Enhancement | ||||||
|
Ein Angebot |
1,688
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K | 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 0.95 V | 8.8 nC | Enhancement | ||||
|
Ein Angebot |
484
Verfügbar auf Lager
|
Texas Instruments | MOSFET High Duty Cycle Sync Buck NexFET | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 15 A | 13.4 mOhms, 13.4 mOhms | 0.95 V | 3.5 nC | ||||||
|
Ein Angebot |
981
Verfügbar auf Lager
|
Texas Instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 8 A | 9.9 mOhms | 0.95 V | 8.4 nC | NexFET | ||||
|
Ein Angebot |
48,955
Verfügbar auf Lager
|
Nexperia | MOSFET 20V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | 0.95 V | 1.4 nV | Enhancement | ||||||
|
siehe | Taiwan Semiconductor | MOSFET 20V N channel MOSFET | 8 V | SMD/SMT | SOT-26-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 4 A | 70 mOhms | 0.95 V |
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