- Hersteller :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Channel Mode :
- Ausgewählter Filter :
15 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,645
Verfügbar auf Lager
|
IXYS | MOSFET 0.2 A 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | ||
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Ein Angebot |
320
Verfügbar auf Lager
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | ||||
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Ein Angebot |
238
Verfügbar auf Lager
|
IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | ||
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Ein Angebot |
62
Verfügbar auf Lager
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | ||||
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|
|
Ein Angebot |
50
Verfügbar auf Lager
|
IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | ||||
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Ein Angebot |
161
Verfügbar auf Lager
|
IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | ||||
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Ein Angebot |
8,271
Verfügbar auf Lager
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Microchip Technology | MOSFET 500V 30Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 160 mA | 30 Ohms | Enhancement | ||||
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Ein Angebot |
5,500
Verfügbar auf Lager
|
Microchip Technology | MOSFET 350V 25Ohm | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 85 mA | 30 Ohms | Enhancement | ||||
|
|
Ein Angebot |
129
Verfügbar auf Lager
|
Microchip Technology | MOSFET 500V 30Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 500 V | - 100 mA | 30 Ohms | Enhancement | ||||
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siehe | IXYS | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 500 mA | 30 Ohms | 4 V | 8.1 nC | Enhancement | |||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | ||||||||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement |
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