- Hersteller :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
128,001
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 0.125 Ohms | 1.5 V | 5.3 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
3,028
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 30V 3A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 0.125 Ohms | - 2 V | 6.5 nC | Enhancement | TrenchFET |
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