- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
4,670
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon | +/- 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 650 mA | 495 mOhms | - 700 mV | 1.5 nC | Enhancement | |||
|
Ein Angebot |
251
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MO... | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 495 mOhms | 2 V to 4 V | 16 nC | Enhancement | |||
|
Ein Angebot |
2,478
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.14 A | 495 mOhms | - 1.2 V | 1.5 nC | Enhancement |
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