Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
DMP21D0UT-7
1+
$0.2000
10+
$0.1272
100+
$0.0544
1000+
$0.0420
3000+
$0.0320
Ein Angebot
RFQ
4,670
Verfügbar auf Lager
Diodes Incorporated MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon +/- 8 V SMD/SMT SOT-523-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 650 mA 495 mOhms - 700 mV 1.5 nC Enhancement
STL12N60M2
1+
$0.6480
10+
$0.5520
100+
$0.4400
500+
$0.3852
3000+
$0.2972
Ein Angebot
RFQ
251
Verfügbar auf Lager
STMicroelectronics MOSFET N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MO... 25 V SMD/SMT PowerFLAT-5x6-HV-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 6.5 A 495 mOhms 2 V to 4 V 16 nC Enhancement
DMP21D0UFD-7
1+
$0.1840
10+
$0.1276
100+
$0.0588
1000+
$0.0452
3000+
$0.0384
Ein Angebot
RFQ
2,478
Verfügbar auf Lager
Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K +/- 8 V SMD/SMT X1-DFN1212-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 1.14 A 495 mOhms - 1.2 V 1.5 nC Enhancement