- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
975
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 395 mOhms | 2 V | 16 nC | Enhancement | ||||
|
Ein Angebot |
952
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | - | SMD/SMT | TO-252-3 | - | - | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 395 mOhms | - | 16 nC | Enhancement | |||
|
Ein Angebot |
352
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.5 A | 395 mOhms | 3 V | 19.5 nC | Enhancement |
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