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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
397
Verfügbar auf Lager
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Toshiba | MOSFET N-Ch 800V 700pF 13nC 6.5A 110W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 795 mOhms | 3 V | 13 nC | Enhancement |
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