- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,990
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | 20 V, 20 V | SMD/SMT | TSMT-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 4.5 A, 4.5 A | 56 mOhms, 56 mOhms | 1 V, 1 V | 3 nC, 3 nC | Enhancement | ||||
|
|
Ein Angebot |
5,548
Verfügbar auf Lager
|
Texas Instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | - 6 V, - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1.6 A, - 1.6 A | 56 mOhms, 56 mOhms | - 1.1 V, - 1.1 V | 2.5 nC, 2.5 nC | Enhancement | NexFET |
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