- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
186
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650V 0.061 Ohm 40 A Mdmesh M5 | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | Si | N-Channel | 650 V | 22.5 A | 61 mOhms | 4 V | 96 nC | |||||
|
|
Ein Angebot |
2,285
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 150V/18V N Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 61 mOhms | 2 V to 4 V | 8.4 nC | PowerTrench | |||
|
|
Ein Angebot |
366
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 61 mOhms | 300 mV | 2.8 nC | Enhancement | |||
|
|
Ein Angebot |
2,879
Verfügbar auf Lager
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF | 6 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 61 mOhms | - 0.3 V to - 1 V | 37.6 nC | ||||
|
|
Ein Angebot |
2,529
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Pch -30V -12A Middle Power MOSFET | 20 V | SMD/SMT | HSMT-8 | Reel | 1 Channel | Si | P-Channel | - 39 V | - 12 A | 61 mOhms | - 2.5 V | 62 nC |
1 / 1 Seite
