- Hersteller :
- Package / Case :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,458
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 600V 0.186Ohm typ. 18A MDmesh M2 | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | Reel | 1 Channel | Si | N-Channel | 600 V | 18 A | 186 mOhms | 3 V | 29 nC | ||||||
|
Ein Angebot |
10,000
Verfügbar auf Lager
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 8 V | SMD/SMT | CST3-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 800 mA | 186 mOhms | 400 mV | 1 nC | Enhancement | ||||
|
Ein Angebot |
6,890
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal FET 0.8A 20V 0.84ohm | 8 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 800 mA | 186 mOhms | 400 mV | 1 nC | Enhancement |
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