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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,803
Verfügbar auf Lager
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Toshiba | MOSFET Small-signal MOSFET | 12 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 23.8 mOhms | 500 mV | 9.4 nC | Enhancement |
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