- Hersteller :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,476
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V 1.9A NCH MOSFET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 4.7 Ohms | QFET | ||||||
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Ein Angebot |
5,252
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 4.7 Ohms | Enhancement | ||||
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Ein Angebot |
864
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | |||
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Ein Angebot |
1,485
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | |||
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Ein Angebot |
2,889
Verfügbar auf Lager
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 4.7 Ohms | 1.1 V | Enhancement |
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