- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
733
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 4.5 V | 8.8 nC | SuperFET II | ||||
|
|
Ein Angebot |
919
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 2.5 V | 6.8 nC | Enhancement | SuperFET II | ||
|
|
|
Ein Angebot |
495
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | Bulk | 1 Channel | Si | N-Channel | 800 V | 2 A | 4.3 Ohms | 12.7 nC | |||||||
|
|
Ein Angebot |
1,704
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 3.4 Ohm | PW-Mold-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.3 Ohms | ||||||||||
|
|
Ein Angebot |
405
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 30 V | Through Hole | PW-Mold2-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.3 Ohms | 2.4 V | 7 nC | Enhancement |
1 / 1 Seite
