- Hersteller :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
1,977
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 155 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.9 A | 14.8 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
2,198
Verfügbar auf Lager
|
Nexperia | MOSFET Single N-Channel 60V 201A 86W 34mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 14.8 mOhms | 3 V | 20.9 nC | |||||
|
Ein Angebot |
4,927
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 14.8 mOhms | 35 nC | PowerTrench |
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