- Package / Case :
- Number of Channels :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
9,963
Verfügbar auf Lager
|
Nexperia | MOSFET 20 V, dual P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement | |||
|
Ein Angebot |
8,735
Verfügbar auf Lager
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement |
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