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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,897
Verfügbar auf Lager
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Diodes Incorporated | MOSFET Comp ENH Mode FET 12V Vdss 8V VGss | +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | - 12 V, 12 V | - 3.8 A, 5.6 A | 29 mOhms, 61 mOhms | - 1 V, 1 V | 10.5 nC, 10.7 nC | Enhancement |
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