- Hersteller :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
8,680
Verfügbar auf Lager
|
ON Semiconductor | MOSFET PCH+PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | EMH-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 133 mOhms | 12 nC | ||||
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Ein Angebot |
9,248
Verfügbar auf Lager
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ON Semiconductor | MOSFET 12V 3.3A P-Channel | 12 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 133 mOhms | Enhancement | ||||
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Ein Angebot |
2,104
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET PWR MOSFET 4V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 133 mOhms | 2.5 V | 18 nC | |||
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siehe | ON Semiconductor | MOSFET 12V 3.3A P-Channel | 12 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 133 mOhms | Enhancement |
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