Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BUK9Y25-80E,115
1+
$0.2800
10+
$0.2328
100+
$0.1500
1000+
$0.1200
1500+
$0.1016
Ein Angebot
RFQ
2,500
Verfügbar auf Lager
Nexperia MOSFET N-channel 80 V 27 mo FET 15 V SMD/SMT LFPAK56-5 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 37 A 22.2 mOhms 1.7 V 17.1 nC Enhancement
TJ20S04M3L(T6L1,NQ
1+
$0.4880
10+
$0.3920
100+
$0.3012
500+
$0.2660
2000+
$0.1856
siehe
RFQ
Toshiba MOSFET P-Ch MOS -20A -40V 41W 1850pF 0.0222   SMD/SMT TO-252-3     Reel 1 Channel Si P-Channel - 40 V - 20 A 22.2 mOhms