Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SPW35N60CFD
1+
$3.4880
10+
$3.1520
25+
$3.0040
100+
$2.6080
Ein Angebot
RFQ
151
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 600V 34.1A TO247-3 CoolMOS CFD 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 34.1 A 118 mOhms     Enhancement CoolMOS
SSM6K211FE,LF
1+
$0.1760
10+
$0.1280
100+
$0.0804
1000+
$0.0620
4000+
$0.0552
siehe
RFQ
Toshiba MOSFET Small-Signal MOSFET 10 V SMD/SMT ES6-6 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 3.2 A 118 mOhms 350 mV 10.8 nC Enhancement