- Hersteller :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
5,705
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 250V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 830 mA | 1.75 Ohms | Enhancement | ||||
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Ein Angebot |
2,155
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 3 A | 1.75 Ohms | Enhancement | ||||
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Ein Angebot |
1,379
Verfügbar auf Lager
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Infineon / IR | MOSFET Gen 10.7 FredFet 500V 1.5Ohm | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.75 Ohms | 13.3 nC | ||||||
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Ein Angebot |
4,174
Verfügbar auf Lager
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Toshiba | MOSFET Small Signal Mosfet | 20 V | SOT-23-3 | Reel | Si | N-Channel | 60 V | 400 mA | 1.75 Ohms | 2.1 V | ||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 4.5A 450V 30W 380pF 1.75 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 450 V | 4.5 A | 1.75 Ohms |
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