- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,170
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 18 V | SMD/SMT | TO-252-3 | - | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.027 Ohms | - 1 V | 29 nC | Enhancement | ||||
|
Ein Angebot |
725
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 150V 40A 166W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 40 A | 0.027 Ohms | 2.5 V | 70 nC | Enhancement | TrenchFET |
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