- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,139
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET N-CHAN | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement | ||
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|
Ein Angebot |
597
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dual N-Ch 24V Mosfet 0.98W PD | 12 V, 12 V | SMD/SMT | W-DFN5020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V, 24 V | 6.5 A, 6.5 A | 11 mOhms, 11 mOhms | 600 mV, 600 mV | 31.3 nC, 31.3 nC | Enhancement | ||
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|
Ein Angebot |
2,450
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement |
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