- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
573
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
214
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
5,775
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | ||||
|
Ein Angebot |
7,940
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | ||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 75A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
siehe | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
485
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
siehe | Infineon Technologies | MOSFET N-Ch 700V 75A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS |
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