Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Packaging :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
8 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP65R125C7
1+
$1.8280
10+
$1.5560
100+
$1.3480
250+
$1.2800
Ein Angebot
RFQ
573
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
IPW65R125C7
1+
$1.9360
10+
$1.6440
100+
$1.4240
250+
$1.3520
Ein Angebot
RFQ
214
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
BSD214SN H6327
1+
$0.1600
10+
$0.1020
100+
$0.0440
1000+
$0.0336
9000+
$0.0228
Ein Angebot
RFQ
5,775
Verfügbar auf Lager
Infineon Technologies MOSFET SMALL SIGNAL+P-CH 12 V SMD/SMT SOT-363-6 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 1.5 A 111 mOhms 700 mV 800 pC Enhancement  
BSD214SNH6327XTSA1
1+
$0.1600
10+
$0.1020
100+
$0.0440
1000+
$0.0336
9000+
$0.0228
Ein Angebot
RFQ
7,940
Verfügbar auf Lager
Infineon Technologies MOSFET SMALL SIGNAL+P-CH 12 V SMD/SMT SOT-363-6 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 1.5 A 111 mOhms 700 mV 800 pC Enhancement  
IPB65R125C7
1+
$1.8280
10+
$1.5560
100+
$1.3480
250+
$1.2800
1000+
$0.9680
Ein Angebot
RFQ
1,000
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 700V 75A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
IPW65R125C7XKSA1
1+
$1.9360
10+
$1.6440
100+
$1.4240
250+
$1.3520
siehe
RFQ
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
IPP65R125C7XKSA1
1+
$1.8280
10+
$1.5560
100+
$1.3480
250+
$1.2800
Ein Angebot
RFQ
485
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
IPB65R125C7ATMA1
1000+
$0.9680
2000+
$0.9200
5000+
$0.8840
siehe
RFQ
Infineon Technologies MOSFET N-Ch 700V 75A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS