- Hersteller :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,850
Verfügbar auf Lager
|
Infineon / IR | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 28.5 mOhms | 4 V | 39 nC | Enhancement | ||
|
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Ein Angebot |
1,839
Verfügbar auf Lager
|
ON Semiconductor | MOSFET PCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 28 A | 28.5 mOhms | 80 nC | ||||
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Ein Angebot |
81
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 100V 35A 28.5mOhm 39nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 28.5 mOhms | 4 V | 59 nC | |||||
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Ein Angebot |
3,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET UDFN6 30V 6.3A 26.3M | SMD/SMT | uDFN-6 | Reel | Si | N-Channel | 30 V | 6.1 A | 28.5 mOhms | |||||||||
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siehe | ON Semiconductor | MOSFET NFET UDFN6 30V 6.3A 26.3M | SMD/SMT | uDFN-6 | Reel | Si | N-Channel | 30 V | 6.1 A | 28.5 mOhms |
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