- Mounting Style :
- Package / Case :
- Packaging :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
5,302
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 500 V | 350 mA | 5.3 Ohms | Enhancement | ||||
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Ein Angebot |
4,990
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET Power MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 5.3 Ohms | Enhancement | ||||
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Ein Angebot |
5,900
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 500 mA | 5.3 Ohms | 800 mV | Enhancement | |||
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Ein Angebot |
289
Verfügbar auf Lager
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Micro Commercial Components (MCC) | MOSFET 350mW, 60V, 340mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 340 mA | 5.3 Ohms | 1 V | 30 nC | |||
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Ein Angebot |
5,026
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET NCh/500V/1.3a/5.5Ohm | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 520 V | 1.3 A | 5.3 Ohms | Enhancement | ||||
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siehe | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 500 mA | 5.3 Ohms | 800 mV | Enhancement | ||||
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siehe | Microchip Technology | MOSFET N-Channel MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5.3 Ohms |
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