- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
6,761
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 10.6 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
785
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | |||
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Ein Angebot |
1,732
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,967
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 57 A | 10.6 mOhms | 1.9 V | 6.8 nC | ||||
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Ein Angebot |
12,500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 10.6 mOhms | 1.2 V | 69 nC | Enhancement | |||
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siehe | Toshiba | MOSFET N-Ch 30V FET 20A 32W 1600pF 23nC | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 10.6 mOhms | 23 nC |
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