Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Packaging :
Transistor Polarity :
Vgs th - Gate-Source Threshold Voltage :
8 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPW65R065C7
1+
$3.3320
10+
$3.0120
25+
$2.8720
100+
$2.4960
Ein Angebot
RFQ
228
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3.5 V 64 nC Enhancement CoolMOS
IPP65R065C7
1+
$3.0920
10+
$2.7960
25+
$2.6640
100+
$2.3160
Ein Angebot
RFQ
235
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS
IPZ65R065C7XKSA1
1+
$3.4680
10+
$3.1360
25+
$2.9880
100+
$2.5960
Ein Angebot
RFQ
115
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS
IPZ65R065C7
1+
$3.4680
10+
$3.1360
25+
$2.9880
100+
$2.5960
Ein Angebot
RFQ
240
Verfügbar auf Lager
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS
IPB65R065C7
1000+
$1.7560
2000+
$1.6920
siehe
RFQ
Infineon Technologies MOSFET N-Ch 700V 145A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS
IPB65R065C7ATMA1
1000+
$1.7560
2000+
$1.6920
siehe
RFQ
Infineon Technologies MOSFET N-Ch 700V 145A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS
IPW65R065C7XKSA1
240+
$2.4960
480+
$2.3840
720+
$2.1720
1200+
$1.8920
siehe
RFQ
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel, NPN 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS
IPP65R065C7XKSA1
500+
$2.0160
1000+
$1.7560
2500+
$1.6920
siehe
RFQ
Infineon Technologies MOSFET HIGH POWER_NEW 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 33 A 58 mOhms 3 V 64 nC Enhancement CoolMOS