- Hersteller :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
5,559
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 450 Volt 0.4 A | 30 V | SMD/SMT | SOIC-8 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 450 V | 400 mA | 4.1 Ohms | 7 nC | Enhancement | |||
|
|
Ein Angebot |
1,999
Verfügbar auf Lager
|
Nexperia | MOSFET 30V 200 MA P-CH TRENCH MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 4.1 Ohms | 1.1 V | 0.72 nC | Enhancement | |||
|
|
Ein Angebot |
10,000
Verfügbar auf Lager
|
Nexperia | MOSFET P-Chan -30V -300mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 4.1 Ohms | |||||||
|
|
siehe | ROHM Semiconductor | MOSFET 10V DRIVE N-Ch MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2 A | 4.1 Ohms | 2.5 V | 6.7 nC | Enhancement |
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