- Hersteller :
- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
1,202
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.8 A | 1.95 Ohms | Enhancement | |||||
|
|
Ein Angebot |
787
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-CH/800V/6A/QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.3 A | 1.95 Ohms | Enhancement | QFET | ||||
|
|
Ein Angebot |
1,787
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC | |||||
|
|
|
siehe | STMicroelectronics | MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC |
1 / 1 Seite
