- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,191
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power... | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 550 mOhms | 2 V | 12.4 nC | Enhancement | ||
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Ein Angebot |
1,765
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 550 mOhms | 2 V | 13.5 nC | Enhancement |
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