- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,690
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 225 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | ||
|
|
Ein Angebot |
2,186
Verfügbar auf Lager
|
ON Semiconductor | MOSFET Pwr MOSFET 100V 2A 225mOhm | SOIC-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 100 V | 2 A, - 2 A | 225 mOhms | ||||||||||
|
|
Ein Angebot |
1,642
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.2 A | 225 mOhms | Enhancement | |||||
|
|
Ein Angebot |
2,695
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 225 mOhms | Enhancement | |||||
|
|
Ein Angebot |
2,121
Verfügbar auf Lager
|
Toshiba | MOSFET Vds=-30V Id=-2A 3Pin | +/- 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 225 mOhms | - 1.2 V | Enhancement | ||||
|
|
Ein Angebot |
980
Verfügbar auf Lager
|
Panasonic | MOSFET Gate res integrated Dual Nch MOSFET | 8 V | SMD/SMT | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 1.5 A, 2 A | 225 mOhms | 350 mV | 1.7 nC | Enhancement | ||||
|
|
Ein Angebot |
970
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH 4V DRIVE SERIES | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 225 mOhms |
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