Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
4 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
CSD23382F4T
1+
$0.1640
10+
$0.1316
25+
$0.1272
100+
$0.0896
250+
$0.0788
Ein Angebot
RFQ
827
Verfügbar auf Lager
Texas Instruments MOSFET P-Ch NexFET Power MOSFET - 0.8 V SMD/SMT Picostar-3     Reel 1 Channel Si P-Channel - 12 V - 3.5 A 149 mOhms - 0.8 V 1.04 nC Enhancement  
Default Photo
3000+
$0.7080
6000+
$0.6800
siehe
RFQ
Infineon Technologies MOSFET HIGH POWER_LEGACY 20 V SMD/SMT VSON-4 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 21.3 A 149 mOhms 3.5 V 86 nC Enhancement CoolMOS
IPL65R165CFDAUMA1
3000+
$0.7080
6000+
$0.6800
siehe
RFQ
Infineon Technologies MOSFET HIGH POWER_LEGACY 20 V SMD/SMT VSON-4 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 21.3 A 149 mOhms 3.5 V 86 nC Enhancement CoolMOS
SCH1433-TL-W
1+
$0.1960
10+
$0.1472
100+
$0.0800
1000+
$0.0600
5000+
$0.0516
Ein Angebot
RFQ
4,918
Verfügbar auf Lager
ON Semiconductor MOSFET NCH 1.8V DRIVE SERIE 10 V SMD/SMT SOT-563-6   + 150 C Reel 1 Channel Si N-Channel 20 V 3.5 A 149 mOhms 400 mV 2.8 nC Enhancement