- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
827
Verfügbar auf Lager
|
Texas Instruments | MOSFET P-Ch NexFET Power MOSFET | - 0.8 V | SMD/SMT | Picostar-3 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 149 mOhms | - 0.8 V | 1.04 nC | Enhancement | ||||||
|
siehe | Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21.3 A | 149 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
|
siehe | Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21.3 A | 149 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
4,918
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH 1.8V DRIVE SERIE | 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 149 mOhms | 400 mV | 2.8 nC | Enhancement |
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