- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
19 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
1,663
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT5 150/25V PchMOSFET | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 99 mOhms | - 2.8 V | 22 nC | PowerTrench Power Clip | ||||
|
Ein Angebot |
508
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 99 mOhms | 119 nC | CoolMOS | |||||
|
Ein Angebot |
1,063
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
1,063
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 99 mOhms | Enhancement | CoolMOS | |||||
|
Ein Angebot |
350
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
316
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
220
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
70
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
113
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CPA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 99 mOhms | Enhancement | CoolMOS | |||||
|
Ein Angebot |
974
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.5 A | 99 mOhms | 1 V | 14.9 nC | Enhancement | ||||
|
Ein Angebot |
210
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
16
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 38 A | 99 mOhms | 3 V | 112 nC | Enhancement | |||||
|
Ein Angebot |
7,561
Verfügbar auf Lager
|
Nexperia | MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.8 A | 99 mOhms | 1.65 V | 11 nC | Enhancement | ||||
|
Ein Angebot |
750
Verfügbar auf Lager
|
Texas Instruments | MOSFET Dual N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5 A | 99 mOhms | 600 mV | 5.4 nC | NexFET | ||||
|
Ein Angebot |
6,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 99 mOhms | 25.2 nC | Enhancement | PowerDI | |||||||
|
siehe | Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 700V 38A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 700 V | 38 A | 99 mOhms | CoolMOS | |||||||||||
|
Ein Angebot |
2,957
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH 1.8V Power MOSFE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.5 A | 99 mOhms | 400 mV | 5.1 nC | Enhancement |
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