- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
243
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.4mOhms 120nC | 20 V | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | ||||||||
|
Ein Angebot |
172
Verfügbar auf Lager
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 1.7mOhms | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 350 A | 1.7 mOhms | 220 nC | |||||||||
|
Ein Angebot |
94
Verfügbar auf Lager
|
IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
|
Ein Angebot |
100
Verfügbar auf Lager
|
IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
|
Ein Angebot |
39
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 1.7 mOhms | 1.68 V | Enhancement | |||||
|
siehe | Nexperia | MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | |||||||||||
|
siehe | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | ||||||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.7 mOhms | 4.5 V | 377 nC | Enhancement | ||||
|
Ein Angebot |
423
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.7 mOhms | 4.5 V | 377 nC | |||||
|
Ein Angebot |
900
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 40 V 1.4 mOhm 160A I2PAK STripFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.7 mOhms | 4 V | 240 nC | Enhancement | STripFET |
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