- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,602
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET -12V P-Channel PowerTrench MOSFET | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 8 A | 22 mOhms | PowerTrench | ||||||
|
Ein Angebot |
864
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNALN-CH | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.5 A | 22 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
|
Ein Angebot |
2,820
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.5V DRIVE MOSFET PCH | 8 V | SMD/SMT | SOT-363T-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.5 A | 22 mOhms | 40 nC | Enhancement |
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