- Hersteller :
- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,000
Verfügbar auf Lager
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Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | ||||
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Ein Angebot |
1,170
Verfügbar auf Lager
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | |||
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|
|
Ein Angebot |
2,938
Verfügbar auf Lager
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Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 4 V | 34 nC | |||
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siehe | Nexperia | MOSFET RAIL PWR-MOS | 10 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 22 mOhms | Enhancement | |||||
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siehe | Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 22 mOhms | Enhancement | |||||
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siehe | Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 4 V | 34 nC |
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