- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
29 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,977
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 8.4 mOhms | 2 V | 68 nC | Enhancement | |||
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Ein Angebot |
2,684
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
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Ein Angebot |
1,010
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
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Ein Angebot |
484
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 50A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 8.4 mOhms | Enhancement | OptiMOS | ||||
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Ein Angebot |
3,092
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET SO8FL 30V TR | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58.5 A | 8.4 mOhms | 1.8 V | 25 nC | Enhancement | |||
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Ein Angebot |
772
Verfügbar auf Lager
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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Ein Angebot |
633
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 70 A | 8.4 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
1,979
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10.5 A | 8.4 mOhms | 500 mV | 25.8 nC | Enhancement | |||
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Ein Angebot |
673
Verfügbar auf Lager
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Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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Ein Angebot |
457
Verfügbar auf Lager
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Infineon / IR | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | ||||||||
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Ein Angebot |
234
Verfügbar auf Lager
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 8.4 mOhms | Enhancement | |||||
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Ein Angebot |
242
Verfügbar auf Lager
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Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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Ein Angebot |
590
Verfügbar auf Lager
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Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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Ein Angebot |
190
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Channel 30V Pwr Mosfet | 22 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 48 A | 8.4 mOhms | Enhancement | |||||
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Ein Angebot |
316
Verfügbar auf Lager
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Toshiba | MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.4 mOhms | 2 V to 4 V | 23 nC | Enhancement | ||||
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Ein Angebot |
4,865
Verfügbar auf Lager
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Nexperia | MOSFET N-CH 60V STD LEVEL MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.4 mOhms | 4.8 V | 70.8 nC | Enhancement | |||
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Ein Angebot |
3,000
Verfügbar auf Lager
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ON Semiconductor | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 75 A | 8.4 mOhms | 76 nC | |||||
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siehe | Infineon Technologies | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 70 A | 8.4 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
4,940
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 8.4 mOhms | 43.4 nC | OptiMOS | ||||
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siehe | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | ||||||||
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siehe | Nexperia | MOSFET Trans MOSFET N-CH 55V 110A 3Pin(3+Tab) | 15 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8.4 mOhms | 2.3 V | 45 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | |||||||||
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Ein Angebot |
44
Verfügbar auf Lager
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Toshiba | MOSFET 80V N-Ch PWR FET 80A 103W 37nC | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 8.4 mOhms | 37 nC | |||||||
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Ein Angebot |
2,431
Verfügbar auf Lager
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Infineon / IR | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | ||||||||
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siehe | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | ||||||||
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Ein Angebot |
354
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 60 A | 8.4 mOhms | 2.55 V | 14 nC | ||||||
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siehe | Infineon / IR | MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | ||||||||
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siehe | Infineon / IR | MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC | ||||||||
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siehe | Infineon / IR | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 60 V | 79 A | 8.4 mOhms | 46 nC |
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