- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
416
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 112 A | 5.9 mOhms | 3 V | 61 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
589
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
1,328
Verfügbar auf Lager
|
Infineon / IR | MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | Enhancement | |||||
|
Ein Angebot |
300
Verfügbar auf Lager
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | ||||||
|
Ein Angebot |
322
Verfügbar auf Lager
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | ||||||
|
Ein Angebot |
37
Verfügbar auf Lager
|
Infineon / IR | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5.9 mOhms | 3 V | 140 nC | Enhancement | ||||
|
Ein Angebot |
498
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
siehe | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | |||||||
|
siehe | Nexperia | MOSFET Trans MOSFET N-CH 40V 198A 3Pin(3+Tab) | 15 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 198 A | 5.9 mOhms | 2.3 V | 128 nC | Enhancement | |||||
|
Ein Angebot |
1,844
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 75 A | 5.9 mOhms | 1.7 V | 17 nC | Enhancement | ||||
|
Ein Angebot |
822
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 112 A | 5.9 mOhms | 3 V | 61 nC | Enhancement | OptiMOS |
1 / 1 Seite