- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Tradename :
- Ausgewählter Filter :
17 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
868
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
671
Verfügbar auf Lager
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
281
Verfügbar auf Lager
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
4,345
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
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Ein Angebot |
994
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | |||||
|
Ein Angebot |
3,308
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
|
Ein Angebot |
440
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | |||||
|
Ein Angebot |
1,972
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 150V 1.9A 280mOhm 10nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | ||||||||
|
Ein Angebot |
191
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | ||||
|
Ein Angebot |
255
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | |||||
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Ein Angebot |
5
Verfügbar auf Lager
|
IXYS | MOSFET 38 Amps 1000V 0.25 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 280 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 40 Amps 1100V 0.2800 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 21 A | 280 mOhms | Enhancement | HyperFET | ||||||
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siehe | Infineon Technologies | MOSFET N-Ch 700V 13.8A D2PAK-2 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 280 mOhms | 3 V | 45 nC | CoolMOS | |||||
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siehe | IXYS | MOSFET Q2-Class HiperFET 1000, 22A | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 280 mOhms | Enhancement | HyperFET | ||||||
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siehe | STMicroelectronics | MOSFET N-Ch 620V 0.34 Ohm 15A SuperMESH 3 2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 15.5 A | 280 mOhms | 105 nC | Enhancement | ||||||
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Ein Angebot |
2,103
Verfügbar auf Lager
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Infineon / IR | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | Enhancement | |||||
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Ein Angebot |
1,574
Verfügbar auf Lager
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS |
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