- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,150
Verfügbar auf Lager
|
Microchip Technology | MOSFET 500V 125Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 500 V | - 54 mA | 125 Ohms | Enhancement | ||
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siehe | Microchip Technology | MOSFET 500V N&P 60/125 Ohm | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 500 V | 16 A | 125 Ohms | Enhancement |
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