- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,631
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 40V 380A 1.4mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 380 A | 1 MOhms | 120 nC | Enhancement | ||
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Ein Angebot |
243
Verfügbar auf Lager
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.4mOhms 120nC | 20 V | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | |||||
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Ein Angebot |
71
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFET_(20V,40V)_47 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 24 V | 380 A | 1.25 mOhms | ||||||||
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siehe | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | |||||
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siehe | Infineon / IR | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.4 mOhms |
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